| Application Number: | 200510115452.5 | Application date: | 2005.11.03 |
| name: | Silicon crystallization method using a ramp type laser beam | ||
| Public (announcement) number: | CN1783426 | Public (announcement) day: | 2006.06.07 |
| Main classification number: | H01L21/00 (2006.01)I | The original application number of the division: | |
| Classification number: | H01L21/00(2006.01)I; H01L21/20(2006.01)I; H01L21/268(2006.01)I; H01L21/324(2006.01)I; H01L21/336(2006.01)I; B23K26/00(2006.01)I; C30B28/00(2006.01)I; G02F1/133(2006.01)I | ||
| Award day: | priority: | 2004.11.4 KR 10-2004-0089449 | |
| Application (patent) person: | LG. Phillips LCD Co., Ltd. | ||
| address: | Seoul, Korea | ||
| Invention (design) person: | Yu Zaicheng | International application: | |
| International announcement: | Enter country date: | ||
| Patent agency: | Beijing Lvcheng Tongye Intellectual Property Agency Co., Ltd. | agent: | Xu Jinguo; Liang Hui |
A crystallization method comprising: forming an amorphous silicon layer on a substrate; forming a front crystallization region by irradiating an amorphous silicon layer with a laser beam having a slope-shaped cross section lowered in a scanning direction; and moving a predetermined length in a scanning direction The second crystal is performed to partially overlap the front crystalline region formed by the front crystal.
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