| Application Number: | 97100900.7 | Application date: | 1997.04.04 |
| name: | Method for manufacturing multilayer amorphous silicon | ||
| Public (announcement) number: | CN1167336 | Public (announcement) day: | 1997.12.10 |
| Main classification number: | H01L21/02 | The original application number of the division: | |
| Classification number: | H01L21/02 | ||
| Award day: | priority: | 1996.4.29 US 08/638671 | |
| Application (patent) person: | World Advanced Integrated Circuit Co., Ltd. | ||
| address: | No. 123, Sanlu Road, Hsinchu County, Hsinchu Science and Technology Park, Taiwan | ||
| Invention (design) person: | Wu Xilin | International application: | |
| International announcement: | Enter country date: | ||
| Patent agency: | Zhongke Patent Agency Co., Ltd. | agent: | Liu Xiaofeng |
A method of forming a plurality of layers of amorphous silicon, comprising: forming a silicon oxide layer on a semiconductor substrate; forming at least two polysilicon layers on the silicon oxide layer; forming a metal silicide layer on the polysilicon layer; and A gate region is defined on the silicide layer. The invention can reduce the influence of fluorine atoms on the silicon oxide layer and the whole component and can reduce the resistance value between the polysilicon metal and the metal wiring.
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